110GHz无电感CMOS分频器

Seongwoong Lim, Wasanthamala Badalawa, M. Fujishima
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引用次数: 2

摘要

提出了一种无电感的110GHz环形分频器(RILFD)。采用体注入和偏置技术,实现了高速三分运算和工作频率的微调。RILFD采用1P12M 65nm块体CMOS工艺制备。核心大小为10.8×8.5μm2。当体偏置电压在- 0.2V到0.4V范围内变化时,锁定范围为9.1%,范围为100.8 ~ 110.4GHz。RILFD在电源电压为1V时消耗4.5mW,不包括输出缓冲器。在1MHz偏移时,输出相位噪声为- 117.6dBc/Hz。这项工作已经实现了迄今为止在100GHz以上工作的分频器中最小的核心尺寸。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 110GHz inductor-less CMOS frequency divider
An inductor-less 110GHz ring-type frequency divider (RILFD) has been proposed. Body-injection and biasing technique have been adopted to achieve high speed and divide-by-three operation and fine tuning of operation frequency. The RILFD was fabricated by a 1P12M 65nm bulk CMOS process. The core size is 10.8×8.5μm2. The locking range is 9.1%, from 100.8 to 110.4GHz, under varying of body-bias voltage from −0.2V to 0.4V. The RILFD consumes 4.5mW at the supply voltage of 1V excluding an output buffer. The output phase noise is −117.6dBc/Hz at 1MHz offset. This work has been achieved the smallest core size among frequency dividers reported to date operating over 100GHz.
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