一种适用于高压应用的新型发射开关双极晶体管器件的分析与性能

S. Buonomo, S. Musumeci, R. Pagano, C. Porto, A. Raciti, R. Scollo
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引用次数: 10

摘要

本文对一种适用于高压中频应用的新型单片级联码——发射开关双极晶体管(ESBT)进行了分析和实验研究。该器件的性能与功率MOSFET进行了比较,具有相同的阻断电压和相同的额定电流。以反激方案为工作平台,在实际应用中进行了实验研究。本文给出了这两种器件的主要优点和缺点,特别是开关特性和正向电压,从而为寻找ESBT的有效利用的功率转换器设计者提供了有用的信息。解释了ESBT的物理结构与其电气特性之间的相关性,旨在了解属于该器件家族的一些有趣特征。最后,对ESBT驱动要求进行了分析和讨论,并提出了几种用于四端器件通电的电路拓扑结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis and performances of a new emitter-switching bipolar transistor device suitable for high-voltage applications
This paper deals with the analysis and experimental investigation of a new monolithic cascode, named the emitter-switching bipolar transistor (ESBT), which is suitable for high-voltage medium-frequency applications. The performances of the device are compared with those of a power MOSFET, having equal blocking voltage and equal rated current. The experimental investigation has been carried out in an actual application using a flyback scheme as workbench. The main advantages and drawbacks of the two devices, with special reference to the switching characteristics and the forward voltage, are hence shown, thus providing useful information to the power converter designers looking for a good exploiting of the ESBT. The correlation between the physical structure of the ESBT and its electrical characteristics is explained aiming to understand some interesting features belonging to the device family. Finally, analysis and discussion on the ESBT driving requirements are done, while several circuit topologies, which are devoted to energize the four-terminal device, are proposed.
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