{"title":"90nm CMOS中4-mm 4000 × 1晶体管阵列模内变化的宽范围空间频率分析","authors":"D. Levacq, T. Minakawa, M. Takamiya, T. Sakurai","doi":"10.1109/CICC.2007.4405727","DOIUrl":null,"url":null,"abstract":"In order to investigate the systematic intra-die variations, the intra-die threshold voltage and on-current variations are measured thanks to 4-mm 4000times1 transistor arrays with 1 mum transistor-pitch in a 90 nm CMOS technology, achieving the widest spatial distribution range. The spatial frequency analysis of the variations indicates that both variations are random across 4 mm. The dependence of both variations on body bias is also measured and the relationships between threshold voltage variations and on-current variations are analyzed by using the alpha-power law model.","PeriodicalId":130106,"journal":{"name":"2007 IEEE Custom Integrated Circuits Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A Wide Range Spatial Frequency Analysis of Intra-Die Variations with 4-mm 4000 × 1 Transistor Arrays in 90nm CMOS\",\"authors\":\"D. Levacq, T. Minakawa, M. Takamiya, T. Sakurai\",\"doi\":\"10.1109/CICC.2007.4405727\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to investigate the systematic intra-die variations, the intra-die threshold voltage and on-current variations are measured thanks to 4-mm 4000times1 transistor arrays with 1 mum transistor-pitch in a 90 nm CMOS technology, achieving the widest spatial distribution range. The spatial frequency analysis of the variations indicates that both variations are random across 4 mm. The dependence of both variations on body bias is also measured and the relationships between threshold voltage variations and on-current variations are analyzed by using the alpha-power law model.\",\"PeriodicalId\":130106,\"journal\":{\"name\":\"2007 IEEE Custom Integrated Circuits Conference\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Custom Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2007.4405727\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2007.4405727","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Wide Range Spatial Frequency Analysis of Intra-Die Variations with 4-mm 4000 × 1 Transistor Arrays in 90nm CMOS
In order to investigate the systematic intra-die variations, the intra-die threshold voltage and on-current variations are measured thanks to 4-mm 4000times1 transistor arrays with 1 mum transistor-pitch in a 90 nm CMOS technology, achieving the widest spatial distribution range. The spatial frequency analysis of the variations indicates that both variations are random across 4 mm. The dependence of both variations on body bias is also measured and the relationships between threshold voltage variations and on-current variations are analyzed by using the alpha-power law model.
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