比较CMOS体和FinFET技术中的高性能电池

C. Meinhardt, R. Reis
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引用次数: 2

摘要

技术的发展给集成电路设计带来了新的挑战。参数的变化和复杂的设计规则要求创建合适的设计方法以确保可制造性。常规布局技术允许在早期设计步骤中更准确地估计电路功率和延迟。在这种情况下,本工作提出了一组基本候选细胞的评估,以在常规布局合成流程中集成32nm高性能细胞库。考虑到延迟优化流程,与预测FinFET技术相比,CMOS体技术中的逆变器,NAND2和NOR2门具有更好的动态和静态功率结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparing high-performance cells in CMOS bulk and FinFET technologies
Technology evolution brings new challenges to integrated circuits (IC) design. Parameter variation and complex design rules demand a great effort to create suitable design approaches to ensure manufacturability. Regular layout techniques allow a more accurate estimate of the circuit power and delay in early design steps. In this context, this work presents an evaluation of a set of basic cells candidates to integrate a 32nm high performance cell library in a regular layout synthesis flow. Considering a delay optimization flow, Inverters, NAND2 and NOR2 gates in CMOS bulk technology have shown better dynamic and static power results, when compared with predictive FinFET technologies.
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