P. Franzon, W. R. Davis, M. Steer, S. Lipa, Eun Chu Oh, T. Thorolfsson, S. Melamed, S. Luniya, Tad Doxsee, Stephen Berkeley, Ben Shani, Kurt Obermiller
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High density through silicon vias (TSV) can be used to build 3DICs that enable unique applications in computing, signal processing and memory intensive systems. This paper presents several case studies that are uniquely enhanced through 3D implementation, including a 3D CAM, an FFT processor, and a SAR processor. The CAD flow used to implement for these designs is described. 3DIC requires higher fidelity thermal modeling than 2DIC design. The rationale for this requirement is established and a possible solution is presented.
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