A. Artamonov, V. Nelayev, I. Shelibak, A. Turtsevich
{"title":"IGBT技术设计及器件优化","authors":"A. Artamonov, V. Nelayev, I. Shelibak, A. Turtsevich","doi":"10.1109/EWDTS.2011.6116415","DOIUrl":null,"url":null,"abstract":"Power semiconductor devices are important microelectronic components determined by the efficiency, size, and cost of electronic systems for energy application. Insulated Gate Bipolar Transistor (IGBT) is popular device from series of microelectronics elements base for power energetic applications. Exact design of the modern element base for microelectronics provides reliable operation of the system. The paper presents and discusses the results of IGBT manufacturing technology and device design. These results were obtained by means of Silvaco software package intended for technology/device simulation.","PeriodicalId":339676,"journal":{"name":"2011 9th East-West Design & Test Symposium (EWDTS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"IGBT technology design and device optimization\",\"authors\":\"A. Artamonov, V. Nelayev, I. Shelibak, A. Turtsevich\",\"doi\":\"10.1109/EWDTS.2011.6116415\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Power semiconductor devices are important microelectronic components determined by the efficiency, size, and cost of electronic systems for energy application. Insulated Gate Bipolar Transistor (IGBT) is popular device from series of microelectronics elements base for power energetic applications. Exact design of the modern element base for microelectronics provides reliable operation of the system. The paper presents and discusses the results of IGBT manufacturing technology and device design. These results were obtained by means of Silvaco software package intended for technology/device simulation.\",\"PeriodicalId\":339676,\"journal\":{\"name\":\"2011 9th East-West Design & Test Symposium (EWDTS)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-09-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 9th East-West Design & Test Symposium (EWDTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EWDTS.2011.6116415\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 9th East-West Design & Test Symposium (EWDTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EWDTS.2011.6116415","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Power semiconductor devices are important microelectronic components determined by the efficiency, size, and cost of electronic systems for energy application. Insulated Gate Bipolar Transistor (IGBT) is popular device from series of microelectronics elements base for power energetic applications. Exact design of the modern element base for microelectronics provides reliable operation of the system. The paper presents and discusses the results of IGBT manufacturing technology and device design. These results were obtained by means of Silvaco software package intended for technology/device simulation.
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