{"title":"40GS/s跟踪保持放大器与62dB SFDR3在45nm CMOS SOI","authors":"Himanshu Aggrawal, A. Babakhani","doi":"10.1109/MWSYM.2014.6848630","DOIUrl":null,"url":null,"abstract":"A 40GS/s Track-and-Hold amplifier with active cancellation capability is presented to mitigate the effect of leakage in transmission gate during the holding mode. A single-ended RF input signal is converted to a differential signal that feeds the active cancellation network. A record SFDR3 of 62dB with 40GS/s and 5GHz input frequency is reported in 45nm CMOS SOI. A droop voltage of 20μv/ns is measured. An isolation of 32dB at 1GHz between the holding and tracking modes is recorded.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"A 40GS/s Track-and-Hold amplifier with 62dB SFDR3 in 45nm CMOS SOI\",\"authors\":\"Himanshu Aggrawal, A. Babakhani\",\"doi\":\"10.1109/MWSYM.2014.6848630\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 40GS/s Track-and-Hold amplifier with active cancellation capability is presented to mitigate the effect of leakage in transmission gate during the holding mode. A single-ended RF input signal is converted to a differential signal that feeds the active cancellation network. A record SFDR3 of 62dB with 40GS/s and 5GHz input frequency is reported in 45nm CMOS SOI. A droop voltage of 20μv/ns is measured. An isolation of 32dB at 1GHz between the holding and tracking modes is recorded.\",\"PeriodicalId\":262816,\"journal\":{\"name\":\"2014 IEEE MTT-S International Microwave Symposium (IMS2014)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE MTT-S International Microwave Symposium (IMS2014)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2014.6848630\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2014.6848630","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 40GS/s Track-and-Hold amplifier with 62dB SFDR3 in 45nm CMOS SOI
A 40GS/s Track-and-Hold amplifier with active cancellation capability is presented to mitigate the effect of leakage in transmission gate during the holding mode. A single-ended RF input signal is converted to a differential signal that feeds the active cancellation network. A record SFDR3 of 62dB with 40GS/s and 5GHz input frequency is reported in 45nm CMOS SOI. A droop voltage of 20μv/ns is measured. An isolation of 32dB at 1GHz between the holding and tracking modes is recorded.
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