C. Xuejun, Chen Xiaojian, Gao Jianfeng, Lin Jinting
{"title":"2- 26ghz低噪声MMIC功率放大器","authors":"C. Xuejun, Chen Xiaojian, Gao Jianfeng, Lin Jinting","doi":"10.1109/ICMMT.2000.895622","DOIUrl":null,"url":null,"abstract":"This paper describes the modeling, design, fabrication and performance of a monolithic 2/spl sim/26 GHz PHEMT power amplifier with low noise characteristic. By using a distributed circuit and series gate capacitors, the measured gain is 6.5/spl plusmn/0.5 dB with both in and out VSWR less than 2.0 in the broad band, and the measured output power is over 300 mW with 3.5/spl sim/5.5 dB noise figure in 2/spl sim/20 GHz frequency range. The amplifier is truly monolithic, with all matching and biasing and DC block circuitry included on the chip. The finished chip size is 3.2 mm/spl times/1.275 mm/spl times/0.1 mm.","PeriodicalId":354225,"journal":{"name":"ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 2-26 GHz MMIC power amplifier with low noise figure\",\"authors\":\"C. Xuejun, Chen Xiaojian, Gao Jianfeng, Lin Jinting\",\"doi\":\"10.1109/ICMMT.2000.895622\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the modeling, design, fabrication and performance of a monolithic 2/spl sim/26 GHz PHEMT power amplifier with low noise characteristic. By using a distributed circuit and series gate capacitors, the measured gain is 6.5/spl plusmn/0.5 dB with both in and out VSWR less than 2.0 in the broad band, and the measured output power is over 300 mW with 3.5/spl sim/5.5 dB noise figure in 2/spl sim/20 GHz frequency range. The amplifier is truly monolithic, with all matching and biasing and DC block circuitry included on the chip. The finished chip size is 3.2 mm/spl times/1.275 mm/spl times/0.1 mm.\",\"PeriodicalId\":354225,\"journal\":{\"name\":\"ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMMT.2000.895622\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2000.895622","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 2-26 GHz MMIC power amplifier with low noise figure
This paper describes the modeling, design, fabrication and performance of a monolithic 2/spl sim/26 GHz PHEMT power amplifier with low noise characteristic. By using a distributed circuit and series gate capacitors, the measured gain is 6.5/spl plusmn/0.5 dB with both in and out VSWR less than 2.0 in the broad band, and the measured output power is over 300 mW with 3.5/spl sim/5.5 dB noise figure in 2/spl sim/20 GHz frequency range. The amplifier is truly monolithic, with all matching and biasing and DC block circuitry included on the chip. The finished chip size is 3.2 mm/spl times/1.275 mm/spl times/0.1 mm.