太阳能光电解用二硒化铜镓光电阴极

B. Marsen, B. Cole, S. Dorn, R. Rocheleau, E. Miller
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引用次数: 2

摘要

铜黄铜矿薄膜具有适合太阳能转换过程的性能,如直接带隙和优良的载流子输运。为了探索利用这些材料光解太阳能制氢的可能性,我们通过真空共蒸发元素成分合成了p型多晶CuGaSe2薄膜,并对所得薄膜和电极进行了物理和电化学表征。在带隙为1.65 eV的CuGaSe2材料上,2.2微米厚的电极产生的室外1太阳光电流为16 mA/cm2,而0.9微米薄的电极仍然产生12.6 mA/cm2的光电流,并伴有强烈的气体释放。平坦带电位测量和饱和光电流的偏置电压要求表明,价带位置对于实际器件实施来说太高了。未来的光电解器件可能基于具有更低价带最大值的铜黄铜矿,并结合合适的辅助结。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Copper gallium diselenide photocathodes for solar photoelectrolysis
Copper chalcopyrite films exhibit properties suitable for solar energy conversion processes such as direct bandgap, and excellent carrier transport. To explore the possibilities of solar-powered hydrogen production by photoelectrolysis using these materials, we have synthesized p-type polycrystalline CuGaSe2 films by vacuum co-evaporation of the elemental constituents, and performed physical and electrochemical characterizations of the resulting films and electrodes. Based on CuGaSe2 material with 1.65 eV bandgap, a 2.2 micron thick electrode exhibited an outdoor 1-sun photocurrent of 16 mA/cm2, while a 0.9 micron thin device still produced 12.6 mA/cm2 in conjunction with vigorous gas evolution. Flatband potential measurements and bias voltage requirements for saturation photocurrents indicate a valence band position to high for practical device implementation. Future photoelectrolysis devices may be based on copper chalcopyrites with lower valence band maximum in conjunction with a suitable auxiliary junction.
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