{"title":"NBTI机制的永久和可恢复分量对采用平面MOSFET和FinFET设计的触发器电路的影响","authors":"M. F. Zainudin, H. Hussin, A. Halim, J. Karim","doi":"10.1109/ISCAIE.2018.8405460","DOIUrl":null,"url":null,"abstract":"Negative Bias Temperature Instability has causes a negative impact to a circuit performance due to the NBTI-induced positive charges that causes a shifts in threshold voltage. However, the impact of NBTI mechanism on a new FinFET devices compare to a conventional planar MOSFET devices are currently not well-understood. Not only that, a circuit reliability study related to NBTI effect on different defect mechanism has not yet been studied extensively. In this work, a numerical simulation based on interface traps and oxide traps is used on both MOSFET and FinFET devices by using MOSRA model. The results shown that FinFET model is degraded due to NBTI compared to MOSFET device. However, the circuit delay and the power consumption of FinFET device has better performance compared to MOSFET device.","PeriodicalId":333327,"journal":{"name":"2018 IEEE Symposium on Computer Applications & Industrial Electronics (ISCAIE)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2018-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Effects of permanent and recoverable component of NBTI mechanisms on flip flop circuits designed using planar MOSFET and FinFET\",\"authors\":\"M. F. Zainudin, H. Hussin, A. Halim, J. Karim\",\"doi\":\"10.1109/ISCAIE.2018.8405460\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Negative Bias Temperature Instability has causes a negative impact to a circuit performance due to the NBTI-induced positive charges that causes a shifts in threshold voltage. However, the impact of NBTI mechanism on a new FinFET devices compare to a conventional planar MOSFET devices are currently not well-understood. Not only that, a circuit reliability study related to NBTI effect on different defect mechanism has not yet been studied extensively. In this work, a numerical simulation based on interface traps and oxide traps is used on both MOSFET and FinFET devices by using MOSRA model. The results shown that FinFET model is degraded due to NBTI compared to MOSFET device. However, the circuit delay and the power consumption of FinFET device has better performance compared to MOSFET device.\",\"PeriodicalId\":333327,\"journal\":{\"name\":\"2018 IEEE Symposium on Computer Applications & Industrial Electronics (ISCAIE)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Symposium on Computer Applications & Industrial Electronics (ISCAIE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCAIE.2018.8405460\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Symposium on Computer Applications & Industrial Electronics (ISCAIE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAIE.2018.8405460","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of permanent and recoverable component of NBTI mechanisms on flip flop circuits designed using planar MOSFET and FinFET
Negative Bias Temperature Instability has causes a negative impact to a circuit performance due to the NBTI-induced positive charges that causes a shifts in threshold voltage. However, the impact of NBTI mechanism on a new FinFET devices compare to a conventional planar MOSFET devices are currently not well-understood. Not only that, a circuit reliability study related to NBTI effect on different defect mechanism has not yet been studied extensively. In this work, a numerical simulation based on interface traps and oxide traps is used on both MOSFET and FinFET devices by using MOSRA model. The results shown that FinFET model is degraded due to NBTI compared to MOSFET device. However, the circuit delay and the power consumption of FinFET device has better performance compared to MOSFET device.