奇维一般格哈密顿的TKNN公式

H. Fukaya, T. Onogi, S. Yamaguchi, Xi Wu
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引用次数: 0

摘要

奇维拓扑绝缘子用拓扑数表示。我们用显式计算证明了一类具有一般U(1)规范相互作用(包括非极小耦合)的费米子双线性哈密顿量的拓扑数与低能量有效作用的chen - simons能级之间众所周知的关系。一系列Ward-Takahashi恒等式对于将chen - simons能级与圈数联系起来至关重要,然后可以通过对时间动量进行积分直接简化为Berry曲率的chen特征。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
TKNN formula for general lattice Hamiltonian in odd dimensions
Topological insulators in odd dimensions are characterized by topological numbers. We prove the well-known relation between the topological number given by the Chern character of the Berry curvature and the Chern-Simons level of the low energy effective action for a general class of Hamiltonians bilinear in the fermion with general U(1) gauge interactions including non-minimal couplings by an explicit calculation. A series of Ward-Takahashi identities are crucial to relate the Chern-Simons level to a winding number, which could then be directly reduced to Chern character of Berry curvature by carrying out the integral over the temporal momenta.
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