基于sram的fpga中多单元干扰的一种新的放置算法

L. Sterpone, N. Battezzati
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引用次数: 8

摘要

现代fpga采用先进的集成电路技术设计,具有高速低功耗性能,并具有可重构功能。这使得新的FPGA器件对空间和航空电子计算非常有利。然而,更大的集成度使得FPGA?由于单个辐射粒子可以翻转附近多个单元的内容,因此更容易出现多单元翻转错误(Multi-Cell Upset errors, mcu)。特别是,新一代基于sram的fpga的mcu正在上升,因为它们的配置存储器基于易失性编程单元,设计具有较小的几何形状,对质子和重离子诱导的效应更敏感。mcu极大地限制了天基电子系统中采用的特定硬化技术的能力,这些技术主要基于三模冗余(TMR)。在本文中,我们描述了一种新的放置算法,用于加固映射在基于sram的fpga上的TMR电路,以抵抗mcu的影响。该算法基于FPGA的布局信息。与逻辑和互连资源位置相关的配置内存和度量。通过对一组基准电路的静态分析,验证了该方法的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A new placement algorithm for the mitigation of multiple cell upsets in SRAM-based FPGAs
Modern FPGAs have been designed with advanced integrated circuit techniques that allow high speed and low power performance, joined to reconfiguration capabilities. This makes new FPGA devices very advantageous for space and avionics computing. However, larger levels of integration makes FPGA?'s configuration memory more prone to suffer Multi-Cell Upset errors (MCUs), caused by a single radiation particle that can flip the content of multiple nearby cells. In particular, MCUs are on the rise for the new generation of SRAM-based FPGAs, since their configuration memory is based on volatile programming cells designed with smaller geometries that result more sensitive to proton- and heavy ion-induced effects. MCUs drastically limits the capabilities of specific hardening techniques adopted in space-based electronic systems, mainly based on Triple Modular Redundancy (TMR). In this paper we describe a new placement algorithm for hardening TMR circuits mapped on SRAM-based FPGAs against the effects of MCUs. The algorithm is based on layout information of the FPGA?'s configuration memory and on metrics related to the logic and interconnection resources locations. Experimental results obtained from MCU static analysis on a set of benchmark circuits hardened by the proposed algorithm prove the efficiency of our approach.
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