增强型Boost有源开关阻抗准z源逆变器

Rahmatullah Aji Prabowo, Mega Agustina, Nur Irfansyah Sholehudin, I. Fadlika, A. Afandi, Aripriharta
{"title":"增强型Boost有源开关阻抗准z源逆变器","authors":"Rahmatullah Aji Prabowo, Mega Agustina, Nur Irfansyah Sholehudin, I. Fadlika, A. Afandi, Aripriharta","doi":"10.1109/ICEEI47359.2019.8988808","DOIUrl":null,"url":null,"abstract":"A new topology called Enhanced Boost Active Switched Impedance-qZSI (EBASZ-QZSI) was introduced in this paper. This topology has a high voltage gain value with a smaller duty cycle compared to the previous topology. This topology also offers lower current ripple values and voltage stresses compared to the previous topology under the same conditions. Analysis of the proposed EBASZ-qZSI topology comprises working principle, boost factor, voltage gain, capacitor voltage stress, current ripple accros inductors, and diode reverse voltage stress. These key parameters are then compared with the previous high boost qZSI topology and demonstrated through simulation software. The results showed that the proposed EBASZ-qZSI topology is a potential single stage converter to be applied in PV-grid integration.","PeriodicalId":236517,"journal":{"name":"2019 International Conference on Electrical Engineering and Informatics (ICEEI)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced Boost Active Switched Impedance Quasi Z-Source Inverter\",\"authors\":\"Rahmatullah Aji Prabowo, Mega Agustina, Nur Irfansyah Sholehudin, I. Fadlika, A. Afandi, Aripriharta\",\"doi\":\"10.1109/ICEEI47359.2019.8988808\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new topology called Enhanced Boost Active Switched Impedance-qZSI (EBASZ-QZSI) was introduced in this paper. This topology has a high voltage gain value with a smaller duty cycle compared to the previous topology. This topology also offers lower current ripple values and voltage stresses compared to the previous topology under the same conditions. Analysis of the proposed EBASZ-qZSI topology comprises working principle, boost factor, voltage gain, capacitor voltage stress, current ripple accros inductors, and diode reverse voltage stress. These key parameters are then compared with the previous high boost qZSI topology and demonstrated through simulation software. The results showed that the proposed EBASZ-qZSI topology is a potential single stage converter to be applied in PV-grid integration.\",\"PeriodicalId\":236517,\"journal\":{\"name\":\"2019 International Conference on Electrical Engineering and Informatics (ICEEI)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Electrical Engineering and Informatics (ICEEI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEEI47359.2019.8988808\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Electrical Engineering and Informatics (ICEEI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEEI47359.2019.8988808","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文介绍了一种新的拓扑结构——增强升压有源交换阻抗qzsi (EBASZ-QZSI)。与以前的拓扑结构相比,这种拓扑结构具有高电压增益值和更小的占空比。在相同条件下,与之前的拓扑结构相比,该拓扑结构还提供更低的电流纹波值和电压应力。分析了EBASZ-qZSI拓扑结构的工作原理、升压因数、电压增益、电容电压应力、电流纹波跨电感和二极管反向电压应力。然后将这些关键参数与以前的高升压qZSI拓扑进行比较,并通过仿真软件进行演示。结果表明,提出的EBASZ-qZSI拓扑结构是一种有潜力应用于光伏电网集成的单级变换器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Enhanced Boost Active Switched Impedance Quasi Z-Source Inverter
A new topology called Enhanced Boost Active Switched Impedance-qZSI (EBASZ-QZSI) was introduced in this paper. This topology has a high voltage gain value with a smaller duty cycle compared to the previous topology. This topology also offers lower current ripple values and voltage stresses compared to the previous topology under the same conditions. Analysis of the proposed EBASZ-qZSI topology comprises working principle, boost factor, voltage gain, capacitor voltage stress, current ripple accros inductors, and diode reverse voltage stress. These key parameters are then compared with the previous high boost qZSI topology and demonstrated through simulation software. The results showed that the proposed EBASZ-qZSI topology is a potential single stage converter to be applied in PV-grid integration.
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