ASAP7 PDK标准单元库设计与优化方法:(特邀论文)

Xiaoqing Xu, Nishi Shah, A. Evans, S. Sinha, B. Cline, G. Yeric
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引用次数: 34

摘要

标准单元库是现代特定应用集成电路设计中整个后端设计和优化流程的基础。如ASAP7制程设计套件(PDK)所述,在7nm及以上技术节点,由于极其复杂的设计约束,标准单元库的设计和优化变得越来越困难。值得注意的复杂性包括finfet导致的分立晶体管尺寸,光刻技术带来的复杂设计规则以及现代标准电池架构带来的限制性布局空间。本文提出的设计方法能够在ASAP7 PDK下实现高效、高质量的标准单元库设计和优化。关键技术包括用于单元时序优化的详尽晶体管尺寸,具有广义欧拉路径的晶体管放置以及用于库级探索的后端设计原型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Standard cell library design and optimization methodology for ASAP7 PDK: (Invited paper)
Standard cell libraries are the foundation for the entire back-end design and optimization flow in modern application-specific integrated circuit designs. At 7nm technology node and beyond, standard cell library design and optimization is becoming increasingly difficult due to extremely complex design constraints, as described in the ASAP7 process design kit (PDK). Notable complexities include discrete transistor sizing due to FinFETs, complicated design rules from lithography and restrictive layout space from modern standard cell architectures. The design methodology presented in this paper enables efficient and high-quality standard cell library design and optimization with the ASAP7 PDK. The key techniques include exhaustive transistor sizing for cell timing optimization, transistor placement with generalized Euler paths and back-end design prototyping for library-level explorations.
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