建立了一种具有温度依赖性和窄通道宽度的NMOS阈值电压模型

2016 13th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON) Pub Date : 2016-06-01 DOI:10.1109/ECTICON.2016.7561330

A. Ruangphanit, A. Poyai, R. Muanghlua, S. Niemcharoen, W. Titiroongruang

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引用次数: 1

摘要

提出了一种具有温度依赖性和窄通道宽度的NMOS阈值电压模型。建立了温度对表面电势、本征载流子浓度和能带隙的影响模型。阈值电压采用线性外推法测量。提出了大型NMOS和窄通道宽度NMOS阈值电压模型的温度依赖关系和体偏置依赖关系。结果表明，实测阈值电压与研制的阈值电压模型相比误差较小。

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Development a novel model of threshold voltage of NMOS with temperature dependence and narrow channel width

In paper, a development a novel model of threshold voltage of NMOS with temperature dependence and narrow channel width was presented. The models have been developed including the temperature affect of surface potentials, intrinsic carrier concentration and energy band gap. The threshold voltages were measured by the linear extrapolation methodology. The temperature dependence and the body-bias dependence of threshold voltage model of a big NMOS and a narrow channel width NMOS are proposed. The results show that, the measured threshold voltage compared with the development threshold voltage model was low level error.

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来源期刊

2016 13th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON)

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