S. Dyakov, N. Gusev, Z. F. Krasil'nik, A. Nezhdanov, A. Novikov, E. Skorokhodov, V. A. Verbus, A. Yablonskiy, D. Yurasov
{"title":"应变工程锗嵌入微谐振器作为硅光子学的有源介质","authors":"S. Dyakov, N. Gusev, Z. F. Krasil'nik, A. Nezhdanov, A. Novikov, E. Skorokhodov, V. A. Verbus, A. Yablonskiy, D. Yurasov","doi":"10.1109/GROUP4.2019.8853931","DOIUrl":null,"url":null,"abstract":"Optical properties of tensile strained n-doped Ge microstructures were investigated. Formation of microresonators based on Bragg reflectors and photonic crystals were implemented for such kind of active medium and opportunities to employ them for fabrication of efficient Si-compatible light sources were discussed.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Strain-Engineered Ge Embedded into Microresonators as an Active Media for Si Photonics\",\"authors\":\"S. Dyakov, N. Gusev, Z. F. Krasil'nik, A. Nezhdanov, A. Novikov, E. Skorokhodov, V. A. Verbus, A. Yablonskiy, D. Yurasov\",\"doi\":\"10.1109/GROUP4.2019.8853931\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Optical properties of tensile strained n-doped Ge microstructures were investigated. Formation of microresonators based on Bragg reflectors and photonic crystals were implemented for such kind of active medium and opportunities to employ them for fabrication of efficient Si-compatible light sources were discussed.\",\"PeriodicalId\":221282,\"journal\":{\"name\":\"2019 IEEE 16th International Conference on Group IV Photonics (GFP)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 16th International Conference on Group IV Photonics (GFP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2019.8853931\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2019.8853931","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Strain-Engineered Ge Embedded into Microresonators as an Active Media for Si Photonics
Optical properties of tensile strained n-doped Ge microstructures were investigated. Formation of microresonators based on Bragg reflectors and photonic crystals were implemented for such kind of active medium and opportunities to employ them for fabrication of efficient Si-compatible light sources were discussed.