Zr(Fe,Cr)2面心立方叶相纳米颗粒中的交叉层错

Fusen Yuan, Ph.D, Geping Li, Ph.D., Chengze Liu, Ph.D, Fuzhou Han, Ph.D, Yingdong Zhang, Ph.D, Ali Muhammad, Ph.D, Hengfei Gu, Ph.D, Wenbin Guo, Ph.D
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引用次数: 0

摘要

层错主要与部分位错的滑动有关。采用透射电镜(TEM)研究了Zr(Fe,Cr)2面心立方(FCC) Laves相纳米颗粒(NP)中的交叉层错(CSFs)。我们的研究结果表明,CSFs起源于1 / 6的相边界<112>同时在交叉密排平面上的肖克利部分位错。更重要的是,进一步讨论了CSFs的驱动力。即加载方向平行或接近<001>在不同的方向上,FCC晶体中会产生CSFs。关于我们研究的知识将为FCC晶体中的CSFs提供一个基本的理解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Cross Stacking Faults in Zr(Fe,Cr)2 Face-Centered Cubic Laves Phase Nanoparticle
Stacking faults (SFs) are mostly related to the glide of partial dislocations. Cross stacking faults (CSFs) in Zr(Fe,Cr)2 face-centered cubic (FCC) Laves phase nanoparticle (NP) were investigated by transmission electron microscopy (TEM). Our results reveal that CSFs originate from the phase boundary by ⅙ <112> Shockley partial dislocations on crossed close-packed planes simultaneously. More importantly, the driving force of CSFs was further discussed. That is, when the loading direction is parallel or close to <001> directions, the CSFs will be induced in FCC crystals. Knowledge about our investigations will provide a fundamental understanding of the CSFs in FCC crystals.
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