跨阻放大器互连效应的研究

2006 17th International Zurich Symposium on Electromagnetic Compatibility Pub Date : 2006-05-15 DOI:10.1109/EMCZUR.2006.215002

Xiaomeng Shi, Zhenghao Lu, Jianguo Ma, E. Li, K. Yeo, M. Do

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引用次数: 0

摘要

采用一种新颖的互连模型对工作在10gb /s数据速率下的跨阻放大器进行了后布局仿真。模型中考虑了不可忽略的高频互连效应，如感应效应、趋肤效应、分布效应、衬底损耗等。采用该模型的仿真结果与传统铸造厂提供的钢筋混凝土互连模型的仿真结果进行了比较。观察到明显的差异，并分析了原因

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Investigation of interconnect effects in a transimpedance amplifier

A novel interconnect model is used in the post layout simulation of a transimpedance amplifier working at 10 GB/s data rate. The unnegligible high frequency interconnect effects such as the inductive effect, skin effect, distributed effect, substrate losses, etc. have been considered in the model. Simulation result employing the proposed model is compared with that using conventional foundry provided RC interconnect model. Apparent discrepancy has been observed and the reason is analyzed

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2006 17th International Zurich Symposium on Electromagnetic Compatibility

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