隧道栅氧化物MOSFET技术

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194387

H. Momose, S.-i. Nakamura, Y. Katsumata, H. Iwai

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引用次数: 0

摘要

介绍了直接隧道栅氧化mosfet的特性。栅极泄漏电流对MOSFET特性的影响随着栅极长度的减小而减小。使用这种低至1.5 nm的超薄氧化物，实现了极高的直流和交流性能。在热载波和TDDB中也观察到更高的可靠性。

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Tunneling gate oxide MOSFET technology

Characteristics of direct tunneling gate oxide MOSFETs are described. The effect of the gate leakage current on the MOSFET characteristics be comes small as gate length reduces. Extremely high DC and AC perform ances were realized using such an ultra-thin oxide down to 1.5 nm. Higher reliability in hot-carrier and TDDB has been also observed.

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27th European Solid-State Device Research Conference

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