Advanced 1T1R test vehicle for RRAM nanosecond-range switching-time resolution and reliability assessment

In this paper we present a high speed dynamical characterization of a HfO2-based Resistive Random Access Memory (RRAM) device. Thanks to a dedicated integrated device, in one Transistor one Resistor (1T1R) configuration, featuring an electrical pad between the selector and the memory cell, we provide very accurate programming measurements at the nanosecond range. The low parasitic capacitance (4pF) allows to detect and recording the transient voltage across the memory cell with a 400 ps resolution. The set voltage as a function of programming speed can thus be measured over a broad time range (10 ns-1 ms). The impact of the programming speed on the cell endurance is assessed. The effect of temperature on programming speed is also shown. It is demonstrated that the tested sample achieves SET with 1.3 V/15 ns pulse, and 1Mcycle is guaranteed with these programming conditions.