InGaP/GaAs异质结双极晶体管发射基结结构设计考虑

W. Liu, J.Y. Chen, W.C. Wang, S. Feng, K. Yu, J. Yan
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引用次数: 1

摘要

制备并研究了在基极-发射极异质界面处具有50 /spl无掺杂间隔层和/spl掺杂片的InGaP/GaAs异质结双极晶体管(HBT)。共发射极电流增益为280毫伏,失调电压小至55毫伏。结果表明,在不钝化发射极-基极结的情况下,可以同时获得高电流增益和低失调电压。实验结果表明,同时采用/spl δ /掺杂层和间隔层确实降低了电位尖峰。另一方面,理论上的考虑也表明,在发射基异质界面之间插入一个/spl δ /掺杂片可以消除电位尖峰。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistor
An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50 /spl Aring/ undoped spacer and /spl delta/-doping sheet at base-emitter heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55 mV are obtained, respectively. This results show that high current gain and low offset voltage can be attained simultaneously without the passivation of emitter-base junction. From the experimental results, it shows that the potential spike is indeed reduced by the employment of an /spl delta/-doped layer and spacer simultaneously. On the other hand, theoretical consideration also shows that the potential spike is removed by inserting a /spl delta/-doping sheet between the emitter-base heterointerface.
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