背偏置对1T-FBRAM存储器应用中UTBOX SOI器件中浮体效应的影响

2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2012-03-14 DOI:10.1109/ICCDCS.2012.6188907

M. Andrade, J. Martino, M. Aoulaiche, N. Collaert, E. Simoen, C. Claeys

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引用次数: 5

摘要

本文在完全耗尽超薄盒绝缘体上硅器件(FD UTBOX SOI)上实验研究了单晶体管浮体随机存取存储器(1T-FBRAM)中的浮体效应。结果表明，使用正的反向偏置可以通过增加当前感知余量以及VG读取窗口来进一步缩放1T-FBRAM。此外，VD工作偏置被降低到冲击电离所需的最小漏极电压，这有利于提高可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The impact of back bias on the floating body effect in UTBOX SOI devices for 1T-FBRAM memory applications

In this paper, the floating body effect used in one Transistor Floating Body Random Access Memory (1T-FBRAM) is experimentally investigated on Fully Depleted Ultra Thin Box Silicon On Insulator devices (FD UTBOX SOI). It is shown that using a positive back bias allows further scaling of 1T-FBRAM by increasing the current sense margin as well as the VG read window. Furthermore, the VD operating bias is reduced to the minimal drain voltage needed for impact ionization, which is beneficial for reliability.

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2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)

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