CMOS上皮秒脉冲产生:超越晶体管限制的设计

Wooram Lee, F. Amoozegar, E. Afshari
{"title":"CMOS上皮秒脉冲产生:超越晶体管限制的设计","authors":"Wooram Lee, F. Amoozegar, E. Afshari","doi":"10.1109/RADAR.2009.4977090","DOIUrl":null,"url":null,"abstract":"Nonlinear transmission media can be used for high amplitude, narrow pulse generation. We developed the theory of pulse generation in one- and two-dimensional transmission lattices. We used a conventional CMOS process to fabricate these lattices. Using these structures, it is possible to generate signals with a bandwidth of more than the cut-off frequency of the fastest transistor on the same process. We showed a 2-D nonlinear lattice that can generate pulses as narrow as 1psec with an amplitude of more than 3V by using nonlinear constructive interference in a conventional 130nm CMOS process.","PeriodicalId":346898,"journal":{"name":"2009 IEEE Radar Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Picosecond pulse generation on CMOS: Design beyond transistor limits\",\"authors\":\"Wooram Lee, F. Amoozegar, E. Afshari\",\"doi\":\"10.1109/RADAR.2009.4977090\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nonlinear transmission media can be used for high amplitude, narrow pulse generation. We developed the theory of pulse generation in one- and two-dimensional transmission lattices. We used a conventional CMOS process to fabricate these lattices. Using these structures, it is possible to generate signals with a bandwidth of more than the cut-off frequency of the fastest transistor on the same process. We showed a 2-D nonlinear lattice that can generate pulses as narrow as 1psec with an amplitude of more than 3V by using nonlinear constructive interference in a conventional 130nm CMOS process.\",\"PeriodicalId\":346898,\"journal\":{\"name\":\"2009 IEEE Radar Conference\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE Radar Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADAR.2009.4977090\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE Radar Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADAR.2009.4977090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

非线性传输介质可用于高振幅、窄脉冲的产生。我们发展了在一维和二维传输晶格中脉冲产生的理论。我们使用传统的CMOS工艺来制造这些晶格。使用这些结构,在相同的过程中,有可能产生带宽超过最快晶体管截止频率的信号。我们展示了一个二维非线性晶格,该晶格可以在传统的130nm CMOS工艺中使用非线性结构干涉产生窄至1psec的脉冲,振幅超过3V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Picosecond pulse generation on CMOS: Design beyond transistor limits
Nonlinear transmission media can be used for high amplitude, narrow pulse generation. We developed the theory of pulse generation in one- and two-dimensional transmission lattices. We used a conventional CMOS process to fabricate these lattices. Using these structures, it is possible to generate signals with a bandwidth of more than the cut-off frequency of the fastest transistor on the same process. We showed a 2-D nonlinear lattice that can generate pulses as narrow as 1psec with an amplitude of more than 3V by using nonlinear constructive interference in a conventional 130nm CMOS process.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信