硅光子学的进展

A. Liu
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引用次数: 0

摘要

基于绝缘体上硅(SOI)的硅光子学最近引起了人们的极大关注,因为它为从电信到芯片对芯片互连的各种应用提供了低成本解决方案的机会。由于单晶硅不具有线性电光效应,设计和制造带宽超过1ghz的高速硅光调制器具有很大的挑战性。在本次演讲中,我们将回顾最近基于金属氧化物半导体(MOS)电容器的快速(GHz)硅光调制器的演示。我们将介绍该器件的设计、制造和表征。我们还将讨论更高速度应用的调制带宽和相位效率缩放。最后,我们将概述其他硅光子学相关主题的最新发展和挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advances in silicon photonics
Silicon photonics based on silicon-on-insulator (SOI) has recently attracted a great deal of attention since it offers an opportunity for low cost solutions for various applications ranging from telecommunications to chip-to-chip interconnects. As single crystal silicon exhibits no linear electro-optic effect, design and fabrication of a high-speed silicon optical modulator with bandwidth exceeding 1 GHz are very challenging. In this presentation we will review the recent demonstration of a fast (GHz) silicon optical modulator based on a metal-oxide-semiconductor (MOS) capacitor. We will present the device design, fabrication, and characterization. We will also discuss the modulation bandwidth and phase efficiency scaling for higher speed applications. Finally, we will give an overview of recent development in other silicon photonics related topics and challenges.
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