可制造的用于光混合集成模块的2.5 Gbit/s边缘耦合波导光电二极管

Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551) Pub Date : 2001-09-30 DOI:10.1109/ECOC.2001.989105

M. Achouche, E. Derouin, D. Carpentier, E. Boucherez, P. Pagnod, C. Jany, F. Poingt, S. Grosmaire, V. Coupé, F. Blache, J. Bonnet-Gamard, L. Giraudet, F. Devaux

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引用次数: 2

摘要

介绍了一种用于硅光学平台表面混合集成的侧照式光电二极管。InGaAs PIN光电二极管芯片在2英寸晶圆上制造，采用集成干蚀刻波导输入面，在晶圆上沉积抗反射涂层，在-10 V偏置电压和25/spl度/C下表现出非常低的暗电流，通常为20 pA。在1.3 /spl mu/m波长下，光纤耦合响应度高达0.95 A/W，垂直耦合公差为-1 dB，宽度为/spl plusmn/2 /spl mu/m。在高温和偏应力条件下的可靠性测试表明，其运行非常稳定。

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Manufacturable 2.5 Gbit/s edge-coupled waveguide photodiode for optical hybrid-integrated modules

Side-illuminated photodiodes designed for surface hybrid integration on a silicon optical bench are described. InGaAs PIN photodiode chips fabricated on a 2inch-wafer with an integrated dry etched waveguide input facet with an antireflection coating deposition on the wafer, exhibit very low dark currents of typically 20 pA at -10 V bias voltage and 25/spl deg/C. Fiber coupled responsivity as high as 0.95 A/W at 1.3 /spl mu/m wavelength, and vertical coupling tolerance at -1 dB as wide as /spl plusmn/2 /spl mu/m are demonstrated. Reliability testing under high temperature and bias-stress conditions shows very stable operation.

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Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551)

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