晶圆制造中使用直接电荷测量的MOS电容测量演示

2016 International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2016-03-28 DOI:10.1109/ICMTS.2016.7476187

K. Takano, M. Goto, E. Shiling, A. Gasasira, J. Liao

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引用次数: 2

摘要

在参数测试中，直接充电测量法(DCM)能够缩短电容的测量时间。通过实际的晶圆测量，我们成功地验证了DCM可以比LCR表更快地测量MOS电容，同时保持良好的晶圆制造相关性。

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Demonstration of MOS capacitor measurement for wafer manufacturing using a Direct Charge Measurement

Direct Charge Measurement (DCM) has a capability to improve the capacitance measurement time in parametric test. Through an actual wafer measurement, we have successfully verified that DCM can measure MOS capacitor much faster than an LCR meter while keeping good correlations for wafer manufacturing.

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2016 International Conference on Microelectronic Test Structures (ICMTS)

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