{"title":"一种用于互调负载-拉特性预测的改进MESFET模型","authors":"J. Pedro, J. Perez","doi":"10.1109/MWSYM.1992.188115","DOIUrl":null,"url":null,"abstract":"The contribution of the cross terms to the prediction of GaAs MESFET intermodulation load-pull behaviour can be important, and a method is presented for the complete experimental characterization of the drain-source current nonlinearities. An accurate characterization of the nonlinear distortion caused by the Ids(Vgs,Vds) current in a MESFET does not allow the common approach of splitting this nonlinear equivalent circuit element in two-voltage dependent nonlinear current sources, Gm(Vgs) and Gds(Vds). By an improved laboratory characterization procedure, it was possible to show that the cross terms of the Ids(Vgs,Vds) Taylor series expansion can give an important contribution to the prediction of a MESFET's intermodulation load-pull behaviour.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"An improved MESFET model for prediction of intermodulation load-pull characterization\",\"authors\":\"J. Pedro, J. Perez\",\"doi\":\"10.1109/MWSYM.1992.188115\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The contribution of the cross terms to the prediction of GaAs MESFET intermodulation load-pull behaviour can be important, and a method is presented for the complete experimental characterization of the drain-source current nonlinearities. An accurate characterization of the nonlinear distortion caused by the Ids(Vgs,Vds) current in a MESFET does not allow the common approach of splitting this nonlinear equivalent circuit element in two-voltage dependent nonlinear current sources, Gm(Vgs) and Gds(Vds). By an improved laboratory characterization procedure, it was possible to show that the cross terms of the Ids(Vgs,Vds) Taylor series expansion can give an important contribution to the prediction of a MESFET's intermodulation load-pull behaviour.<<ETX>>\",\"PeriodicalId\":165665,\"journal\":{\"name\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1992.188115\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 IEEE Microwave Symposium Digest MTT-S","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1992.188115","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An improved MESFET model for prediction of intermodulation load-pull characterization
The contribution of the cross terms to the prediction of GaAs MESFET intermodulation load-pull behaviour can be important, and a method is presented for the complete experimental characterization of the drain-source current nonlinearities. An accurate characterization of the nonlinear distortion caused by the Ids(Vgs,Vds) current in a MESFET does not allow the common approach of splitting this nonlinear equivalent circuit element in two-voltage dependent nonlinear current sources, Gm(Vgs) and Gds(Vds). By an improved laboratory characterization procedure, it was possible to show that the cross terms of the Ids(Vgs,Vds) Taylor series expansion can give an important contribution to the prediction of a MESFET's intermodulation load-pull behaviour.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
