{"title":"超低功耗和极低压电路的弱反转","authors":"E. Vittoz","doi":"10.1109/ASSCC.2009.5357240","DOIUrl":null,"url":null,"abstract":"This paper discusses techniques, limitations and possible future developments of circuits based on transistors operated in the weak inversion (w.i.) mode, also called sub-threshold mode. In analog circuits, w.i. is reached at very low current, but it is also needed for very low supply voltage. Its exponential behaviour can be exploited in special circuits schemes, some of them devised for bipolar transistors. For digital circuits, it can provide the ultimate speed/power ratio in a given process.","PeriodicalId":263023,"journal":{"name":"2009 IEEE Asian Solid-State Circuits Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"46","resultStr":"{\"title\":\"Weak inversion for ultra low-power and very low-voltage circuits\",\"authors\":\"E. Vittoz\",\"doi\":\"10.1109/ASSCC.2009.5357240\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses techniques, limitations and possible future developments of circuits based on transistors operated in the weak inversion (w.i.) mode, also called sub-threshold mode. In analog circuits, w.i. is reached at very low current, but it is also needed for very low supply voltage. Its exponential behaviour can be exploited in special circuits schemes, some of them devised for bipolar transistors. For digital circuits, it can provide the ultimate speed/power ratio in a given process.\",\"PeriodicalId\":263023,\"journal\":{\"name\":\"2009 IEEE Asian Solid-State Circuits Conference\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"46\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE Asian Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2009.5357240\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2009.5357240","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Weak inversion for ultra low-power and very low-voltage circuits
This paper discusses techniques, limitations and possible future developments of circuits based on transistors operated in the weak inversion (w.i.) mode, also called sub-threshold mode. In analog circuits, w.i. is reached at very low current, but it is also needed for very low supply voltage. Its exponential behaviour can be exploited in special circuits schemes, some of them devised for bipolar transistors. For digital circuits, it can provide the ultimate speed/power ratio in a given process.