差分浮栅电容失配测量技术

J. Hunter, P. Gudem, S. Winters
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引用次数: 12

摘要

本文描述了一种差分浮栅电容匹配测量技术,该技术在分辨率上比以前报道的有显著提高。它的差分输出电压较小,测量精度比标准结构高得多。此外,差分技术提供了优越的消除寄生重叠电容效应。我们的技术在0.50 /spl mu/m模拟BiCMOS技术上成功验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A differential floating gate capacitance mismatch measurement technique
This paper describes a differential floating gate capacitance matching measurement technique that offers a significant improvement in resolution over those previously reported. It's smaller differential output voltage can be measured to a much higher precision than that of a standard structure. In addition, the differential technique offers superior cancellation of parasitic overlap capacitance effects. Our technique was successfully demonstrated on a 0.50 /spl mu/m analog BiCMOS technology.
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