射频用双晕双介电三材料环栅MOSFET的噪声分析

2019 Devices for Integrated Circuit (DevIC) Pub Date : 2019-03-01 DOI:10.1109/DEVIC.2019.8783796

Prashanth Kumar, N. Gupta, Rashmi Gupta, Amit Sharma

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引用次数: 1

摘要

本文研究了双光晕双介质三材料包围栅(DH-DD-TM-SG) MOSFET的噪声性能。从噪声系数、噪声电导和最佳阻抗三个方面对噪声性能进行了评价。这些噪声指标显示，与传统的三重材料包围栅极(TM-SG) MOSFET相比，在DH-DD-TM-SG MOSFET中采用双介质和双晕植入物可以显著降低噪声。结果表明，与同类MOSFET相比，DH-DD-TM-SG MOSFET的噪声系数降低了35.7%，最佳阻抗提高了14.49%，适合设计低噪声放大器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Noise analysis of Dual Halo Dual Dielectric Triple Material Surrounding Gate MOSFET for RF applications

In this paper, the noise performance of Dual Halo Dual Dielectric Triple Material Surrounding Gate (DH-DD-TM-SG) MOSFET has been investigated. The assessment of noise performance has been carried out in terms of noise figure, noise conductance and optimum impedance. These noise metrics reveal notable cutback in noise by virtue of dual dielectric and dual halo implants in DH-DD-TM-SG MOSFET in contrast to conventional Triple Material Surrounding Gate (TM-SG) MOSFET. It is scrutinized that noise figure is shrunk by 35.7% and optimum impedance is raised by 14.49% in DH-DD-TM-SG MOSFET than its counterpart, making it a suitable device for designing of low-noise amplifiers.

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2019 Devices for Integrated Circuit (DevIC)

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