Atomistic Study of Transport Characteristics in Sub-1nm Ultra-narrow Molybdenum Disulfide (MoS2) Nanoribbon Field Effect Transistors

In this work, nanoribbon field-effect-transistors (FETs) with an ultra-narrow monolayer MoS2 channel are investigated to understand the transverse scaling limitations of MoS2 FETs. It is observed that the bandgap of monolayer nanoribbon MoS2 can be largely affected by the passivation atoms, wherein OH passivation is more effective than H passivation. Then, impacts of passivation atoms on transport characteristics in MoS2 FETs with ultra-narrow MoS2 channel are calculated. Though higher Ion and lower Ioff can be obtained even in narrow MoS2 FETs with O/H passivation, Ioff is hard to be suppressed due to the contribution of edge states. Our results indicate that edge states engineering could be one key point to integrate MoS2 devices into CMOS technology.