用于高密度存储级存储器的晶体沉积ALD相变材料限制PCM电池

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-01 DOI:10.1109/IEDM.2015.7409621

M. B. Sky, N. Sosa, T. Masuda, W. Kim, S. Kim, A. Ray, R. Bruce, J. Gonsalves, Y. Zhu, K. Suu, C. Lam

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引用次数: 19

摘要

我们首次展示了一种坚固的高宽高比(~4:1)限制PCM电池，该电池利用致密且高度可靠的纳米晶体沉积ALD相变材料。利用原位金属氮化物衬垫和纳米晶ALD Ge-Sb-Te材料填充直径为33nm的孔结构。用于沉积和集成相变材料的调谐过程使编程耐久性超越2.8×1011。我们展示了80ns的快速编程速度和10倍的开关，并在仿真的帮助下，展示了这些元件创建适合存储级存储器的高密度PCM单元的路径。

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Crystalline-as-deposited ALD phase change material confined PCM cell for high density storage class memory

We show, for the first time, a robust high aspect ratio (~4:1) confined PCM cell which utilizes a dense and highly reliable nano-crystalline-as-deposited ALD phase change material. The 33nm diameter pore structures were filled utilizing an in-situ metal nitride liner plus nano-crystalline ALD Ge-Sb-Te material. The tuned process for depositing and integrating the phase change material brings the programming endurance to beyond 2.8×1011. We demonstrate a fast programming speed of 80ns with 10x switching and, with the aid of simulation, show a path for these elements to create a high density PCM cell suitable for Storage Class Memory.

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2015 IEEE International Electron Devices Meeting (IEDM)

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