用于CMOS光子学的多组分GeSi可调浓度硅锗线结构

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/GROUP4.2019.8926039

K. Grabska, S. Saito, M. Banakar, T. D. Bucio, M. Nedeljkovic, C. Littlejohns, F. Gardes, A. Ballabio, A. Barzaghi, G. Isella

{"title":"用于CMOS光子学的多组分GeSi可调浓度硅锗线结构","authors":"K. Grabska, S. Saito, M. Banakar, T. D. Bucio, M. Nedeljkovic, C. Littlejohns, F. Gardes, A. Ballabio, A. Barzaghi, G. Isella","doi":"10.1109/GROUP4.2019.8926039","DOIUrl":null,"url":null,"abstract":"In this presentation, we report for the first time Rapid Melt Growth SiGe based structures embedded in an SOI platform with constant siGe composition over the length of the SiGe wires. This method is suitable for waveguide integration on the SOI platform which is crucial for multi wavelength operation of Franz Keldysh type modulators.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Multi Composition GeSi Tuneable Concentration Silicon-Germanium Wire Structures for CMOS Photonics\",\"authors\":\"K. Grabska, S. Saito, M. Banakar, T. D. Bucio, M. Nedeljkovic, C. Littlejohns, F. Gardes, A. Ballabio, A. Barzaghi, G. Isella\",\"doi\":\"10.1109/GROUP4.2019.8926039\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this presentation, we report for the first time Rapid Melt Growth SiGe based structures embedded in an SOI platform with constant siGe composition over the length of the SiGe wires. This method is suitable for waveguide integration on the SOI platform which is crucial for multi wavelength operation of Franz Keldysh type modulators.\",\"PeriodicalId\":221282,\"journal\":{\"name\":\"2019 IEEE 16th International Conference on Group IV Photonics (GFP)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 16th International Conference on Group IV Photonics (GFP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2019.8926039\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2019.8926039","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在本次演讲中，我们首次报道了嵌入在SOI平台中的基于快速熔体生长SiGe的结构，该结构在SiGe导线的长度上具有恒定的SiGe成分。该方法适用于SOI平台上的波导集成，这对Franz Keldysh型调制器的多波长工作至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Multi Composition GeSi Tuneable Concentration Silicon-Germanium Wire Structures for CMOS Photonics

In this presentation, we report for the first time Rapid Melt Growth SiGe based structures embedded in an SOI platform with constant siGe composition over the length of the SiGe wires. This method is suitable for waveguide integration on the SOI platform which is crucial for multi wavelength operation of Franz Keldysh type modulators.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 IEEE 16th International Conference on Group IV Photonics (GFP)

自引率

0.00%

发文量