Characterization of Charge Plasma-based Junctionless Tunneling Field Effect Transistor (JL-TFET)

The steep doping profile associated with conventional Tunneling Field Effect Transistor (TFET) provides significant hindrances from a fabrication perspective despite the obvious merits of the device. Junctionless TFET (JL-TFET) alleviates the problem considerably by introducing a uniform doping profile across the device. In this study, we have looked at several device parameters like gate insulator dielectric constant, gate insulator thickness, silicon body thickness, doping level, and work function of P-gate and source which affect the performance of the device. The analysis is done based on the impact of parameters on subthreshold swing (SS), on-current to off-current ratio ($I_{on}/I_{off}$), and threshold voltage (VT). The influence of certain parameters on on-current (Ion) has also been looked at. These have enabled us to identify how the tuning of parameters could lead to peak device performance.