用于商业DBS应用的低成本高性能HEMT mmic系列

K. Hubbard, K. MacGowan, C. Kau, D. Smith, S. Maas
{"title":"用于商业DBS应用的低成本高性能HEMT mmic系列","authors":"K. Hubbard, K. MacGowan, C. Kau, D. Smith, S. Maas","doi":"10.1109/MCS.1995.470974","DOIUrl":null,"url":null,"abstract":"A family of GaAs HEMT MMICs have been developed for use in Direct Broadcast Satellite TV (DBS) US, Japanese, and European markets. These designs are very compact, high performance, and self-biased. They are meant as building blocks for low noise block (LNB) downconverters. Described in this paper are the receiver chip, low noise amplifier, and self-biased single HEMT device (should a MIC LNA be preferred). The key design is the receiver chip with a nominal gain of 38 dB and NF of less than 3 dB for the US band. This paper presents a description of each design, a performance summary, as well as information describing their actual use in an LNB design.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A family of low cost high performance HEMT MMICs for commercial DBS applications\",\"authors\":\"K. Hubbard, K. MacGowan, C. Kau, D. Smith, S. Maas\",\"doi\":\"10.1109/MCS.1995.470974\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A family of GaAs HEMT MMICs have been developed for use in Direct Broadcast Satellite TV (DBS) US, Japanese, and European markets. These designs are very compact, high performance, and self-biased. They are meant as building blocks for low noise block (LNB) downconverters. Described in this paper are the receiver chip, low noise amplifier, and self-biased single HEMT device (should a MIC LNA be preferred). The key design is the receiver chip with a nominal gain of 38 dB and NF of less than 3 dB for the US band. This paper presents a description of each design, a performance summary, as well as information describing their actual use in an LNB design.<<ETX>>\",\"PeriodicalId\":325779,\"journal\":{\"name\":\"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1995.470974\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1995.470974","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

摘要

一系列GaAs HEMT mmic已经开发出来,用于美国、日本和欧洲市场的直接广播卫星电视(DBS)。这些设计非常紧凑,高性能和自偏置。它们意味着作为低噪声块(LNB)下变频器的构建块。本文介绍了接收芯片、低噪声放大器和自偏置单HEMT器件(如果首选MIC LNA)。关键设计是接收器芯片,标称增益为38db, NF小于3db用于美国频段。本文给出了每种设计的描述,性能总结,以及描述它们在LNB设计中的实际使用的信息。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A family of low cost high performance HEMT MMICs for commercial DBS applications
A family of GaAs HEMT MMICs have been developed for use in Direct Broadcast Satellite TV (DBS) US, Japanese, and European markets. These designs are very compact, high performance, and self-biased. They are meant as building blocks for low noise block (LNB) downconverters. Described in this paper are the receiver chip, low noise amplifier, and self-biased single HEMT device (should a MIC LNA be preferred). The key design is the receiver chip with a nominal gain of 38 dB and NF of less than 3 dB for the US band. This paper presents a description of each design, a performance summary, as well as information describing their actual use in an LNB design.<>
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信