顺序可逆电路的单缺失电池沉积缺陷分析

Vaishali H. Dhare, U. Mehta
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引用次数: 2

摘要

可逆逻辑可以克服当前CMOS(互补金属氧化物半导体)技术的功耗和散热问题。所有基本的可逆门都是使用量子点元胞自动机(QCA)纳米技术实现的。本文实现了一种基于可逆逻辑的时序电路——SR锁存器。本文提出了利用QCA基本原语——多数派投票人(Majority Voter, MV)实现Fredkin可逆门的方法。由于这种纳米技术更容易出现缺陷。在此基础上,利用qcaddesigner工具对可逆SR锁存器中QCA的单缺失电池沉积缺陷进行了分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Single missing cell deposition defect analysis of sequential reversible circuit
Power and heat dissipation problems of current CMOS (Complementary Metal Oxide Semiconductor) technology can be overcome by the reversible logic. All the basic reversible gates are implemented using QCA (Quantum dot Cellular Automata) nanotechnology. In this paper reversible logic based sequential circuit, SR latch, is implemented. This paper presents the implementation of Fredkin reversible gate using basic primitives of QCA, Majority Voter (MV). As defects are more likely to occur in this nanotechnology. Hence single missing cell deposition defect in QCA in reversible SR latch are analyzed using QCADesigner tool at the layout level.
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