{"title":"低RA隧道结与镁-屏障","authors":"J. Longer, B. Ocker, W. Maass","doi":"10.1109/INTMAG.2006.374890","DOIUrl":null,"url":null,"abstract":"The utilization of MgO as tunnel barrier gave a new boost in the investigation of tunnel-junctions for storage and sensing applications. This paper discusses the deposition technique and the magnetic, electrical, and structural properties of MgO.","PeriodicalId":262607,"journal":{"name":"INTERMAG 2006 - IEEE International Magnetics Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low RA tunnel-junctions with MgO-Barrier\",\"authors\":\"J. Longer, B. Ocker, W. Maass\",\"doi\":\"10.1109/INTMAG.2006.374890\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The utilization of MgO as tunnel barrier gave a new boost in the investigation of tunnel-junctions for storage and sensing applications. This paper discusses the deposition technique and the magnetic, electrical, and structural properties of MgO.\",\"PeriodicalId\":262607,\"journal\":{\"name\":\"INTERMAG 2006 - IEEE International Magnetics Conference\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-05-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"INTERMAG 2006 - IEEE International Magnetics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INTMAG.2006.374890\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"INTERMAG 2006 - IEEE International Magnetics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INTMAG.2006.374890","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The utilization of MgO as tunnel barrier gave a new boost in the investigation of tunnel-junctions for storage and sensing applications. This paper discusses the deposition technique and the magnetic, electrical, and structural properties of MgO.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
