{"title":"0.9 V, 5 nW, 9 ppm/oC, 0.18μm CMOS无电阻子带隙基准电压","authors":"O. E. Mattia, H. Klimach, S. Bampi","doi":"10.1109/LASCAS.2014.6820273","DOIUrl":null,"url":null,"abstract":"In this work a novel resistorless sub-bandgap voltage reference (BGR) is introduced. It is a self-biased and small area topology that works in the nano-ampere current consumption range, and under 1 V of power supply. The analytical behavior of the circuit is described, and simulation results for a standard 0.18 μm CMOS process are analysed. A reference voltage of 479 mV is demonstrated, with a temperature coefficient of 8.79 ppm/°C for the 0 to 125°C range, while the power consumption of the whole circuit is 4.86 nW under a 0.9 V power supply at 27 oC. The estimated silicon area is 0.0012 mm2.","PeriodicalId":235336,"journal":{"name":"2014 IEEE 5th Latin American Symposium on Circuits and Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"0.9 V, 5 nW, 9 ppm/oC resistorless sub-bandgap voltage reference in 0.18μm CMOS\",\"authors\":\"O. E. Mattia, H. Klimach, S. Bampi\",\"doi\":\"10.1109/LASCAS.2014.6820273\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work a novel resistorless sub-bandgap voltage reference (BGR) is introduced. It is a self-biased and small area topology that works in the nano-ampere current consumption range, and under 1 V of power supply. The analytical behavior of the circuit is described, and simulation results for a standard 0.18 μm CMOS process are analysed. A reference voltage of 479 mV is demonstrated, with a temperature coefficient of 8.79 ppm/°C for the 0 to 125°C range, while the power consumption of the whole circuit is 4.86 nW under a 0.9 V power supply at 27 oC. The estimated silicon area is 0.0012 mm2.\",\"PeriodicalId\":235336,\"journal\":{\"name\":\"2014 IEEE 5th Latin American Symposium on Circuits and Systems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE 5th Latin American Symposium on Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LASCAS.2014.6820273\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 5th Latin American Symposium on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LASCAS.2014.6820273","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
0.9 V, 5 nW, 9 ppm/oC resistorless sub-bandgap voltage reference in 0.18μm CMOS
In this work a novel resistorless sub-bandgap voltage reference (BGR) is introduced. It is a self-biased and small area topology that works in the nano-ampere current consumption range, and under 1 V of power supply. The analytical behavior of the circuit is described, and simulation results for a standard 0.18 μm CMOS process are analysed. A reference voltage of 479 mV is demonstrated, with a temperature coefficient of 8.79 ppm/°C for the 0 to 125°C range, while the power consumption of the whole circuit is 4.86 nW under a 0.9 V power supply at 27 oC. The estimated silicon area is 0.0012 mm2.
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