100khz GaN hemt开关3L-ANPC的控制结构和变换器损耗

Martin Geppert, G. Schröder
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引用次数: 0

摘要

本文提出了一个由氮化镓(GaN) 3电平有源中性点箝位变换器(ANPC)和4.55 kW同步磁阻电机(SynRM)组成的驱动系统的变换器损耗估算模型。首先,提出了一种利用GaN hemt和控制系统的ANPC实验装置,并在FPGA上实现。第二步,使用双脉冲测试夹具测量不同电流、电压和温度值下单个GaN HEMT的导通和关断损耗。这些评估的损耗用于创建单个开关的损耗模型,并最终创建3L-ANPC模型。随后研究了不同开关频率和调制策略对逆变器效率的影响。最后,将仿真结果与速度控制SynRM驱动器的实验测量结果进行比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Control structure and Converter losses of a 3L-ANPC with GaN HEMTs switching at 100 kHz
This paper presents a model for estimating the converter losses of a drive system consisting of a Gallium Nitride (GaN) 3-Level Active Neutral Point Clamped Converter (ANPC) and a 4.55 kW synchronous reluctance machine (SynRM). First an experimental setup of the ANPC using GaN HEMTs and the control system, which is implemented on a Zedboard (FPGA), is presented. As a second step the turn-on and -off losses of a single GaN HEMT are measured for different current, voltage and temperature values, using a double pulse test fixture. These evaluated losses are used to create a loss model of a single switch and finally a model of the 3L-ANPC. Subsequently the impact of different switching frequencies and modulation strategies on the efficiency of the inverter is investigated. Finally the results of simulations will be compared with experimental measurements of a speed controlled SynRM drive.
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