{"title":"100khz GaN hemt开关3L-ANPC的控制结构和变换器损耗","authors":"Martin Geppert, G. Schröder","doi":"10.1109/EDPE53134.2021.9604061","DOIUrl":null,"url":null,"abstract":"This paper presents a model for estimating the converter losses of a drive system consisting of a Gallium Nitride (GaN) 3-Level Active Neutral Point Clamped Converter (ANPC) and a 4.55 kW synchronous reluctance machine (SynRM). First an experimental setup of the ANPC using GaN HEMTs and the control system, which is implemented on a Zedboard (FPGA), is presented. As a second step the turn-on and -off losses of a single GaN HEMT are measured for different current, voltage and temperature values, using a double pulse test fixture. These evaluated losses are used to create a loss model of a single switch and finally a model of the 3L-ANPC. Subsequently the impact of different switching frequencies and modulation strategies on the efficiency of the inverter is investigated. Finally the results of simulations will be compared with experimental measurements of a speed controlled SynRM drive.","PeriodicalId":117091,"journal":{"name":"2021 International Conference on Electrical Drives & Power Electronics (EDPE)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Control structure and Converter losses of a 3L-ANPC with GaN HEMTs switching at 100 kHz\",\"authors\":\"Martin Geppert, G. Schröder\",\"doi\":\"10.1109/EDPE53134.2021.9604061\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a model for estimating the converter losses of a drive system consisting of a Gallium Nitride (GaN) 3-Level Active Neutral Point Clamped Converter (ANPC) and a 4.55 kW synchronous reluctance machine (SynRM). First an experimental setup of the ANPC using GaN HEMTs and the control system, which is implemented on a Zedboard (FPGA), is presented. As a second step the turn-on and -off losses of a single GaN HEMT are measured for different current, voltage and temperature values, using a double pulse test fixture. These evaluated losses are used to create a loss model of a single switch and finally a model of the 3L-ANPC. Subsequently the impact of different switching frequencies and modulation strategies on the efficiency of the inverter is investigated. Finally the results of simulations will be compared with experimental measurements of a speed controlled SynRM drive.\",\"PeriodicalId\":117091,\"journal\":{\"name\":\"2021 International Conference on Electrical Drives & Power Electronics (EDPE)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 International Conference on Electrical Drives & Power Electronics (EDPE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDPE53134.2021.9604061\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on Electrical Drives & Power Electronics (EDPE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDPE53134.2021.9604061","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Control structure and Converter losses of a 3L-ANPC with GaN HEMTs switching at 100 kHz
This paper presents a model for estimating the converter losses of a drive system consisting of a Gallium Nitride (GaN) 3-Level Active Neutral Point Clamped Converter (ANPC) and a 4.55 kW synchronous reluctance machine (SynRM). First an experimental setup of the ANPC using GaN HEMTs and the control system, which is implemented on a Zedboard (FPGA), is presented. As a second step the turn-on and -off losses of a single GaN HEMT are measured for different current, voltage and temperature values, using a double pulse test fixture. These evaluated losses are used to create a loss model of a single switch and finally a model of the 3L-ANPC. Subsequently the impact of different switching frequencies and modulation strategies on the efficiency of the inverter is investigated. Finally the results of simulations will be compared with experimental measurements of a speed controlled SynRM drive.