集成在CMOS上的薄膜压电器件

2016 Symposium on Piezoelectricity, Acoustic Waves, and Device Applications (SPAWDA) Pub Date : 2016-10-01 DOI:10.1109/SPAWDA.2016.7829980

M. S. Pandian, E. Ferrer, W. S. Tay, V. Madhaven, A. K. Kantimahanti, G. Sobreviela, A. Uranga, N. Barniol

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引用次数: 8

摘要

在本文中，我们展示了采用“SilTerra MEMS on CMOS”工艺平台制造的放大器设计为300MHz的集成TFSAW谐振的演示结果。将相同的工艺平台扩展到具有真空密封薄膜封装的体声模谐振器。薄膜封装FBAR器件的谐振频率设计为4.6 GHz。

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Thin film piezoelectric devices integrated on CMOS

In this paper we present the demonstrated results on the integrated TFSAW resonance designed to be at 300MHz with an amplifier fabricated using "SilTerra MEMS on CMOS" process platform. The same process platform has been extended for the bulk acoustic mode resonator with a vacuum sealed thin film encapsulation. The thin film encapsulated FBAR device resonance is designed to be at 4.6 GHz.

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2016 Symposium on Piezoelectricity, Acoustic Waves, and Device Applications (SPAWDA)

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