具有Mo/Pr0.7Ca0.3MnO3突触和NbO2 IMT振荡神经元的高密度神经形态系统

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-01 DOI:10.1109/IEDM.2015.7409721

Kibong Moon, E. Cha, Jaesung Park, Sang-gyun Gi, Myonglae Chu, K. Baek, Byunggeun Lee, S. Oh, H. Hwang

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引用次数: 29

摘要

我们报道了用于超高密度神经形态系统的新型纳米级突触和神经元装置。通过采用Mo电极，控制了Mo/Pr0.7Ca0.3MnO3 (PCMO)界面的氧化还原反应，从而显著改善了相同脉冲条件下突触的开关均匀性、扰动性、保留性和多层次数据存储等特性。此外，还开发了基于NbO2的绝缘体-金属过渡振荡器(IMT)。最后，我们通过实验验证了使用11k-bit Mo/PCMO突触阵列和NbO2振荡器神经元可以实现高精度的模式识别。

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High density neuromorphic system with Mo/Pr0.7Ca0.3MnO3 synapse and NbO2 IMT oscillator neuron

We report novel nanoscale synapse and neuron devices for ultra-high density neuromorphic system. By adopting a Mo electrode, the redox reaction at Mo/Pr0.7Ca0.3MnO3 (PCMO) interface was controlled which in turn significantly improve synapse characteristics such as switching uniformity, disturbance, retention and multi-level data storage under identical pulse condition. Furthermore, The NbO2 based Insulator-Metal Transition (IMT) oscillator was developed for neuron application. Finally, we have experimentally confirmed the realization of pattern recognition with high accuracy using the 11k-bit Mo/PCMO synapse array and NbO2 oscillator neuron.

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2015 IEEE International Electron Devices Meeting (IEDM)

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