{"title":"纳米cmos应用的高分辨率卢瑟福后向散射光谱","authors":"K. Kimura, Zhao Ming, K. Nakajima, M. Suzuki","doi":"10.1109/IWNC.2006.4570980","DOIUrl":null,"url":null,"abstract":"A compact high-resolution RBS (HKBS) system, consisting of a simple magnetic spectrometer and a small accelerator, is used for Nano-CMOS applications. The HKBS system has several attractive features, e.g. capability of depth profiling with monolayer depth resolution, small footprint, reasonably short measuring time. Several examples of the applications are presented, which include observation of high-k/Si interface using grazing-angl-esputtering-assisted HKBS, hydrogen depth profiling in gate dielectric films, and observation of Si emission from the SiO2/Si interface during oxidation of HfO2/SiO2/Si(001). These examples show that HKBS is a powerful tool for Nano-CMOS applications.","PeriodicalId":356139,"journal":{"name":"2006 International Workshop on Nano CMOS","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"High-resolution Rutherford backscattering spectroscopy for Nano-CMOS applications\",\"authors\":\"K. Kimura, Zhao Ming, K. Nakajima, M. Suzuki\",\"doi\":\"10.1109/IWNC.2006.4570980\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A compact high-resolution RBS (HKBS) system, consisting of a simple magnetic spectrometer and a small accelerator, is used for Nano-CMOS applications. The HKBS system has several attractive features, e.g. capability of depth profiling with monolayer depth resolution, small footprint, reasonably short measuring time. Several examples of the applications are presented, which include observation of high-k/Si interface using grazing-angl-esputtering-assisted HKBS, hydrogen depth profiling in gate dielectric films, and observation of Si emission from the SiO2/Si interface during oxidation of HfO2/SiO2/Si(001). These examples show that HKBS is a powerful tool for Nano-CMOS applications.\",\"PeriodicalId\":356139,\"journal\":{\"name\":\"2006 International Workshop on Nano CMOS\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Workshop on Nano CMOS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWNC.2006.4570980\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Workshop on Nano CMOS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWNC.2006.4570980","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-resolution Rutherford backscattering spectroscopy for Nano-CMOS applications
A compact high-resolution RBS (HKBS) system, consisting of a simple magnetic spectrometer and a small accelerator, is used for Nano-CMOS applications. The HKBS system has several attractive features, e.g. capability of depth profiling with monolayer depth resolution, small footprint, reasonably short measuring time. Several examples of the applications are presented, which include observation of high-k/Si interface using grazing-angl-esputtering-assisted HKBS, hydrogen depth profiling in gate dielectric films, and observation of Si emission from the SiO2/Si interface during oxidation of HfO2/SiO2/Si(001). These examples show that HKBS is a powerful tool for Nano-CMOS applications.
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