{"title":"带宽带ESD保护的v波段高增益SiGe功率放大器","authors":"Keping Wang, Kaixue Ma, K. Yeo","doi":"10.1109/IEEE-IWS.2015.7164569","DOIUrl":null,"url":null,"abstract":"This paper presents a low-power high-gain V-band power amplifier (PA) in a low-cost commercial 0.18-μm SiGe BiCMOS technology. A novel wideband ESD protection circuit is demonstrated with <;1 dB insertion loss in frequency range of 17-88 GHz. Design techniques utilized to optimize the gain and the power consumption are addressed. In the 60GHz frequency range, the designed PA achieves a peak gain of 20.8 dB under 1.8 V supply and 25.3 dB under 2.4 V supply respectively. The input return loss is better than -10 dB from 50 GHz to 75 GHz. It delivers 8.4 dBm saturated output power at 67 GHz with a 2.4 V supply. TLP measurement result shows that the voltage is clamped below 6 V even under 10 A ESD current.","PeriodicalId":164534,"journal":{"name":"2015 IEEE International Wireless Symposium (IWS 2015)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"V-band high gain SiGe power amplifier with wideband ESD protection\",\"authors\":\"Keping Wang, Kaixue Ma, K. Yeo\",\"doi\":\"10.1109/IEEE-IWS.2015.7164569\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a low-power high-gain V-band power amplifier (PA) in a low-cost commercial 0.18-μm SiGe BiCMOS technology. A novel wideband ESD protection circuit is demonstrated with <;1 dB insertion loss in frequency range of 17-88 GHz. Design techniques utilized to optimize the gain and the power consumption are addressed. In the 60GHz frequency range, the designed PA achieves a peak gain of 20.8 dB under 1.8 V supply and 25.3 dB under 2.4 V supply respectively. The input return loss is better than -10 dB from 50 GHz to 75 GHz. It delivers 8.4 dBm saturated output power at 67 GHz with a 2.4 V supply. TLP measurement result shows that the voltage is clamped below 6 V even under 10 A ESD current.\",\"PeriodicalId\":164534,\"journal\":{\"name\":\"2015 IEEE International Wireless Symposium (IWS 2015)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-07-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Wireless Symposium (IWS 2015)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEEE-IWS.2015.7164569\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Wireless Symposium (IWS 2015)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2015.7164569","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
V-band high gain SiGe power amplifier with wideband ESD protection
This paper presents a low-power high-gain V-band power amplifier (PA) in a low-cost commercial 0.18-μm SiGe BiCMOS technology. A novel wideband ESD protection circuit is demonstrated with <;1 dB insertion loss in frequency range of 17-88 GHz. Design techniques utilized to optimize the gain and the power consumption are addressed. In the 60GHz frequency range, the designed PA achieves a peak gain of 20.8 dB under 1.8 V supply and 25.3 dB under 2.4 V supply respectively. The input return loss is better than -10 dB from 50 GHz to 75 GHz. It delivers 8.4 dBm saturated output power at 67 GHz with a 2.4 V supply. TLP measurement result shows that the voltage is clamped below 6 V even under 10 A ESD current.
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