介绍了忆阻器结构的实验室设备和测试方法

2015 International Conference "Stability and Control Processes" in Memory of V.I. Zubov (SCP) Pub Date : 2015-12-03 DOI:10.1109/SCP.2015.7342088

N. Permiakov, Alexander Ivanov, Vyacheslav Moshnikov

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引用次数: 0

摘要

信息技术的最新进展要求更高速度和更高密度的存储设备。测试和开发这些设备的技术是一项复杂的任务。本文介绍了使用电子显微镜和装置测量电参数的选择。

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The laboratory facility and testing methods memristor structures

Recent advances in information technology require higher-speed and higher-density memory devices. Testing and development of the technology of these devices is a complex task. The paper presents the option of using an electron microscope and setup for measuring electrical parameters.

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2015 International Conference "Stability and Control Processes" in Memory of V.I. Zubov (SCP)

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