基于器件参数变化的MOSFET模型验证新方法

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194431

C. Kuhn, W. Weber

{"title":"基于器件参数变化的MOSFET模型验证新方法","authors":"C. Kuhn, W. Weber","doi":"10.1109/ESSDERC.1997.194431","DOIUrl":null,"url":null,"abstract":"Statistical variation of the threshold voltage is calculated for both NMOS surface channel and PMOS buried channel devices based on the variation of channel doping. This derivation offers a method for verifying MOSFET parameter models. The -models for the buried channel by S.M.Sze [1], Van der Tol [2] and F.M.Klaassen [3] are tested with the clear result that the model of Klaassen is to be preferred to those of the other research groups.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A New Method for Verification of MOSFET Models Based on Device Parameter Variations\",\"authors\":\"C. Kuhn, W. Weber\",\"doi\":\"10.1109/ESSDERC.1997.194431\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Statistical variation of the threshold voltage is calculated for both NMOS surface channel and PMOS buried channel devices based on the variation of channel doping. This derivation offers a method for verifying MOSFET parameter models. The -models for the buried channel by S.M.Sze [1], Van der Tol [2] and F.M.Klaassen [3] are tested with the clear result that the model of Klaassen is to be preferred to those of the other research groups.\",\"PeriodicalId\":424167,\"journal\":{\"name\":\"27th European Solid-State Device Research Conference\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"27th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.1997.194431\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.1997.194431","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

基于沟道掺杂的变化，计算了NMOS表面沟道和PMOS埋地沟道器件阈值电压的统计变化。该推导提供了一种验证MOSFET参数模型的方法。对S.M.Sze[1]、Van der Tol[2]和F.M.Klaassen[3]的埋地河道-模型进行了检验，结果表明，Klaassen的模型优于其他研究组的模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A New Method for Verification of MOSFET Models Based on Device Parameter Variations

Statistical variation of the threshold voltage is calculated for both NMOS surface channel and PMOS buried channel devices based on the variation of channel doping. This derivation offers a method for verifying MOSFET parameter models. The -models for the buried channel by S.M.Sze [1], Van der Tol [2] and F.M.Klaassen [3] are tested with the clear result that the model of Klaassen is to be preferred to those of the other research groups.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

27th European Solid-State Device Research Conference

自引率

0.00%

发文量