飞秒激光脉冲作用下雪崩电离在氟化锂晶体缺陷产生中的作用

V. P. Dresvyanskiy, A. Kuznetsov, S. Enkhbat, O. Bukhtsooj, N. Bobina, S. Alekseev, V. Losev, E. F. Martynovich
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引用次数: 0

摘要

本文介绍了雪崩电离在强飞秒激光辐射与剂量学晶体LiF:Mg,Ti相互作用过程中高度非线性电子-空穴对产生过程中的实验和理论研究结果。我们认为,在热激发发光曲线的高温峰中,由一个阳离子和两个阴离子的分子卤素离子组成的空穴-间隙型缺陷的有效形成可能与发生在灯丝通过区域的雪崩电离过程有关。考虑到这类晶体的雪崩电离作用,计算了激光脉冲期间等离子体密度对时间的依赖关系,表明雪崩电离作用对电子-空穴等离子体密度的贡献与多光子隧穿机制的贡献相当。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The role of avalanche ionization in generation of defects in lithium fluoride crystals under the action of femtosecond laser pulses
The paper presents the results of experimental and theoretical studies of the role of avalanche ionization in the process of highly nonlinear generation of electron-hole pairs in the interaction of intense femtosecond laser radiation with dosimetric crystals LiF:Mg,Ti. We assume that the effective formation of defects of hole-interstitial type, which consist of molecular halogen ions placed in one cationic and two anionic vacancies, distinguished by high-temperature peaks in the thermally stimulated luminescence curves, is feasibly connected with avalanche ionization processes occurring in the regions of passage of light filaments. The calculated dependences of the plasma density on time during the laser pulse made with taking into account the avalanche ionization for this type of crystals show that the contribution of avalanche ionization to the electron-hole plasma density is comparable to that of the multiphoton tunneling mechanism.
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