一种用于近程光微波应用的应变SiGe层异质结双极光电晶体管

MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003. Pub Date : 2003-09-10 DOI:10.1109/MWP.2003.1422840

J. Polleux, F. Moutier, A. Billabert, C. Rumelhard, E. Sonmez, H. Schumacher

{"title":"一种用于近程光微波应用的应变SiGe层异质结双极光电晶体管","authors":"J. Polleux, F. Moutier, A. Billabert, C. Rumelhard, E. Sonmez, H. Schumacher","doi":"10.1109/MWP.2003.1422840","DOIUrl":null,"url":null,"abstract":"A strained-SiGe heterojunction bipolar phototransistor is presented for the first time. Theoretical demonstration of the device is recalled. Practical measurements at 940 nm are presented. A dc phototransistor mode responsivity of 1.49 A/W is achieved. Tools are proposed for the opto-microwave behavior analyses of photodetectors. A frequency behavior reaching 32 GHz with a -70 dBm output level and a 200 /spl mu/W input optical power is demonstrated.","PeriodicalId":432014,"journal":{"name":"MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003.","volume":"116 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":"{\"title\":\"A strained SiGe layer heterojunction bipolar phototransistor for short-range opto-microwave applications\",\"authors\":\"J. Polleux, F. Moutier, A. Billabert, C. Rumelhard, E. Sonmez, H. Schumacher\",\"doi\":\"10.1109/MWP.2003.1422840\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A strained-SiGe heterojunction bipolar phototransistor is presented for the first time. Theoretical demonstration of the device is recalled. Practical measurements at 940 nm are presented. A dc phototransistor mode responsivity of 1.49 A/W is achieved. Tools are proposed for the opto-microwave behavior analyses of photodetectors. A frequency behavior reaching 32 GHz with a -70 dBm output level and a 200 /spl mu/W input optical power is demonstrated.\",\"PeriodicalId\":432014,\"journal\":{\"name\":\"MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003.\",\"volume\":\"116 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"32\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWP.2003.1422840\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWP.2003.1422840","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 32

摘要

首次提出了一种应变型sige异质结双极光电晶体管。回顾了该装置的理论论证。给出了940nm的实际测量结果。实现了1.49 A/W的直流光电晶体管模式响应度。提出了用于光电探测器光微波行为分析的工具。演示了在-70 dBm输出电平和200 /spl mu/W输入光功率下达到32 GHz的频率行为。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A strained SiGe layer heterojunction bipolar phototransistor for short-range opto-microwave applications

A strained-SiGe heterojunction bipolar phototransistor is presented for the first time. Theoretical demonstration of the device is recalled. Practical measurements at 940 nm are presented. A dc phototransistor mode responsivity of 1.49 A/W is achieved. Tools are proposed for the opto-microwave behavior analyses of photodetectors. A frequency behavior reaching 32 GHz with a -70 dBm output level and a 200 /spl mu/W input optical power is demonstrated.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003.

自引率

0.00%

发文量