{"title":"砷化镓mds结构中的类碳金刚石膜","authors":"N. I. Beletsky, N. Polyansky, A. Mishnyov","doi":"10.1109/CRMICO.2001.961630","DOIUrl":null,"url":null,"abstract":"MDS-structures on basis of gallium-arsenide (GaAs) and carbon diamond-like film (CDLF) are experimentally investigated. The attempt is made to estimate influence of CDLF quality on volt-ampere characteristics of MDS-structures by use laser irradiation for improvement of CDLF quality.","PeriodicalId":197471,"journal":{"name":"11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Carbon diamond-like film in GaAs MDS-structures\",\"authors\":\"N. I. Beletsky, N. Polyansky, A. Mishnyov\",\"doi\":\"10.1109/CRMICO.2001.961630\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MDS-structures on basis of gallium-arsenide (GaAs) and carbon diamond-like film (CDLF) are experimentally investigated. The attempt is made to estimate influence of CDLF quality on volt-ampere characteristics of MDS-structures by use laser irradiation for improvement of CDLF quality.\",\"PeriodicalId\":197471,\"journal\":{\"name\":\"11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2001.961630\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2001.961630","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MDS-structures on basis of gallium-arsenide (GaAs) and carbon diamond-like film (CDLF) are experimentally investigated. The attempt is made to estimate influence of CDLF quality on volt-ampere characteristics of MDS-structures by use laser irradiation for improvement of CDLF quality.