ECR:从样品到空腔

A. Valente-Feliciano
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引用次数: 0

摘要

随着高能真空沉积技术的发展,高质量的铌薄膜已经生产出来,支持了高射频性能的前景。在高能缩合中,控制入射离子能量可以实现许多过程,如吸附物质的解吸,表面原子的迁移率增强和撞击离子的亚注入,从而在较低的工艺温度下产生改善的膜结构。近年来,利用生长过程中提供的离子能和热能来影响铌薄膜的成核、结构和材料质量的研究取得了重大进展。通过解耦薄膜-衬底界面、成核和随后的生长,可以创建一个有利的模板,以优化暴露于SRF场的最终表面。与磁控溅射铌薄膜相比,ECR(电子回旋共振)等离子体沉积的薄膜在超导和射频性能方面表现出更好的前景。这一贡献表明了进一步优化ECR Nb/Cu薄膜和从平面过渡到三维结构的持续努力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ECR: From samples to cavities
With the development of energetic vacuum deposition techniques, high quality Nb films have been produced supporting the promise of high RF performance. In energetic condensation, the controlled incoming ion energy enables a number of processes such as desorption of adsorbed species, enhanced mobility of surface atoms and sub-implantation of impinging ions, thus producing improved film structures at lower process temperatures. Significant progress has been made in recent years in using ion energy and thermal energy provided during growth to influence the nucleation, structure and material quality of Nb films. By decoupling the film-substrate interface, nucleation and subsequent growth, one can create a favorable template for optimising the final surface exposed to SRF fields. Films deposited by ECR (electron cyclotron resonance) plasma show promise in improved superconducting and RF behavior compared to magnetron sputtered Nb films. This contribution presents the ongoing efforts to further optimize ECR Nb/Cu films and to transition from flat surfaces to tri-dimensional structures.
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