分析CMOS随机逻辑中电阻式开路的记忆效应

International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. Pub Date : 2006-10-16 DOI:10.1109/DTIS.2006.1708691

M. Renovell, M. Comte, I. Polian, P. Engelke, B. Becker

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引用次数: 7

摘要

本文分析了电阻开路器的电学特性与不可预测电阻的关系。结果表明，电性能取决于开路电阻的值。还表明，由于记忆效应，通过给定矢量Ti检测开路取决于在Ti之前应用于电路的所有矢量。对这种记忆效应进行了电学分析

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analyzing the memory effect of resistive open in CMOS random logic

This paper analyzes the electrical behaviour of resistive opens as a function of its unpredictable resistance. It is demonstrated that the electrical behaviour depends on the value of the open resistance. It is also shown that, due to the memory effect detection of the open by a given vector Ti depends on all the vectors that have been applied to the circuit before Ti. An electrical analysis of this memory effect is presented

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International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.

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